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R8002ANX
Nch 800V 2A Power MOSFET
l Outline
Datasheet
V DSS
R DS(on) (Max.)
I D
800V
4.3 W
2A
TO-220FM
l Features
P D
35W
l Inner circuit
(1) (2)
(3)
1) Low on-resistance.
2) Fast switching speed.
3) Gate-source voltage (V GSS ) guaranteed to be ? 30V.
4) Drive circuits can be simple.
5) Parallel use is easy.
6) Pb-free lead plating ; RoHS compliant
l Packaging specifications
(1) Gate
(2) Drain
(3) Source
*1 Body Diode
Packaging
Bulk
l Application
Reel size (mm)
-
Switching Power Supply
Type
Tape width (mm)
Basic ordering unit (pcs)
Taping code
Marking
-
500
-
R8002ANX
l Absolute maximum ratings (T a = 25 ? C)
Parameter
Drain - Source voltage
Symbol
V DSS
Value
800
Unit
V
Continuous drain current
T c = 25°C
T c = 100°C
I D *1
I D *1
? 2
? 1
A
A
Pulsed drain current
I D,pulse
*2
? 8
A
Gate - Source voltage
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current
Power dissipation (T c = 25°C)
Junction temperature
Range of storage temperature
Reverse diode dv/dt
www.rohm.com
? 2012 ROHM Co., Ltd. All rights reserved.
1/13
V GSS
E AS *3
E AR *4
I AR *3
P D
T j
T stg
dv/dt *5
? 30
0.265
0.212
1
35
150
- 55 to + 150
15
V
mJ
mJ
A
W
? C
? C
V/ns
2012.10 - Rev.B
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